US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Feb. 4 for "Method of making an individualization zone of an integrated circuit" (French Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,083, issued on Feb. 4, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method of making an individualization zone of an integrated circuit" was invented by Nicolas Posseme (Sassenage, France), Stefan Landis (Tullins, France) and Hubert Teyssedre (Echirolles, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to a method for making an individualization zone of a microchip comprising a first (10A) and a second (20A) level of electrical tracks (10, 20), and a conductor layer (30A) comprising via holes (30), the method comprising the following steps: providing at least one dielectric layer...