US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Feb. 25 for "Architecture with stacked N and P transistors with a channel structure formed of nanowires" (French Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,330, issued on Feb. 25, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Architecture with stacked N and P transistors with a channel structure formed of nanowires" was invented by Sylvain Barraud (Grenoble, France), Jean-Pierre Colinge (Grenoble, France) and Bernard Previtali (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device with stacked transistors includes a first transistor of a first type, in particular N or P, the first transistor having a channel formed in one or more first semi-conducting rods of a semi-conducting structure including semi-conducting rods disposed above each othe...