US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS on Feb. 17 for "Method of vertical growth of a III-V material" (French Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,437, issued on Feb. 17, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and CNRS (Paris).

"Method of vertical growth of a III-V material" was invented by Matthew Charles (Grenoble, France) and Yvon Cordier (Valbonne, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for growing a III-V material may include forming at least one layer on a stack including a crystalline layer made of III-V material, a first masking layer surmounting the germination layer, the first masking layer having at least one first opening; depositing a second masking layer covering an upper face of the sacrificial layer; formin...