US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE on June 24 for "Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure" (French Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,661, issued on June 24, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Paris).

"Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure" was invented by Amelie Dussaigne (Grenoble, France), Benjamin Damilano (Paris), Carole Pernel (Grenoble, France) and Stephane Vezian (Paris).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a relaxed epitaxial InGaN layer from a GaN/InGaN substrate comprising the following steps: a) providing a first stack comprisi...