US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES, INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, UNIVERSITE CLAUDE BERNARD LYON 1, ECOLE CENTRALE DE LYON, ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON on March 18 for "Method for producing non-contiguous metal oxide semiconductors, of uniform and controlled size and density" (French Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,066, issued on March 18, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Paris), UNIVERSITE GRENOBLE ALPES (Saint Martin d'Heres, France), INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON (Villeurbanne, France), UNIVERSITE CLAUDE BERNARD LYON 1 (Villeurbanne, France), ECOLE CENTRALE DE LYON (Ecully, France) and ECOLE SUPERIEURE CHIMIE PHYSIQUE ELECTRONIQUE LYON (Villeurbanne, France).

"Method for producing non-contiguous metal oxide semiconductors, of uniform and controlled size and density" was invented by Pierre-Vincent Guenery (Saint-Berthevin, France), Thierry Baron (Saint-Egreve, France) a...