US Patent Issued to City University of Hong Kong on Feb. 3 for "Vapor deposition of tellurium nanomesh electronics on arbitrary surfaces at low temperature" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,518, issued on Feb. 3, was assigned to City University of Hong Kong (Kowloon, Hong Kong).

"Vapor deposition of tellurium nanomesh electronics on arbitrary surfaces at low temperature" was invented by Johnny Chung Yin Ho (Shatin, Hong Kong), You Meng (Kowloon, Hong Kong), Wei Wang (Kowloon, Hong Kong) and Weijun Wang (Yau Tsim Mong, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating semiconducting tellurium (Te) nanomesh. The method includes the steps of preparing a substrate, vaporizing Te powders under a first temperature; and growing Te nanomesh on the substrate using the vaporized Te powders under a second temperature...