US Patent Issued to City University of Hong Kong on Feb. 18 for "Protocol for the synthesis of bismuth vanadate double-layer homojunction without heteroatoms as photoelectrode" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,227,856, issued on Feb. 18, was assigned to City University of Hong Kong (Kowloon, Hong Kong).

"Protocol for the synthesis of bismuth vanadate double-layer homojunction without heteroatoms as photoelectrode" was invented by Ruiqin Zhang (Kowloon, Hong Kong) and Haipeng Wang (Kowloon, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photoelectrode includes a double-layer homojunction of metal oxide semiconductor films without heteroatoms incorporated. The metal oxide semiconductor films are uniform in large size with rich oxygen vacancies. For BiVO4 films, Bi precursor can be electrodeposited on a substrate under atmospheric pressure and air at...