US Patent Issued to CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, DENSO on April 22 for "Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot" (Japanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,410, issued on April 22, was assigned to CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY (Tokyo) and DENSO Corp. (Kariya, Japan).

"Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot" was invented by Norihiro Hoshino (Yokosuka, Japan), Isaho Kamata (Yokosuka, Japan), Hidekazu Tsuchida (Yokosuka, Japan), Takahiro Kanda (Kariya, Japan) and Takeshi Okamoto (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced i...