US Patent Issued to BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY CHINA on Aug. 19 for "Homologous heterostructure FeSe electrode material with high tap density and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,391,551, issued on Aug. 19, was assigned to BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY CHINA (China).

"Homologous heterostructure FeSe electrode material with high tap density and preparation method thereof" was invented by Ying Xiao (Beijing), Yue Miao (Beijing), Fenglian Gong (Beijing), Shilin Hu (Beijing) and Shimou Chen (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "This invention introduces a homologous heterostructure FeSe electrode material with exceptional tap density and its preparation method, situated within a specific technical domain. The material comprises a unique homo-heterostructure of tetragonal t-FeSe and hexagonal h-FeSe, boa...