ALEXANDRIA, Va., July 9 -- United States Patent no. 12,351,737, issued on July 8, was assigned to BASF SE (Ludwigshafen am Rhein, Germany).

"Chemical mechanical polishing of substrates containing copper and ruthenium" was invented by Haci Osman Guevenc (Ludwigshafen am Rhein, Germany), Michael Lauter (Ludwigshafen am Rhein, Germany), Te Yu Wei (Taoyuan, Taiwan), Wei Lan Chiu (Taipei, Taiwan), Reza M. Golzarian (Portland, Ore.), Julian Proelss (Allschwil, Switzerland) and Leonardus Leunissen (Veldhoven, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The pres...