ALEXANDRIA, Va., July 23 -- United States Patent no. 12,365,981, issued on July 22, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Synthesis and use of precursors for ALD of molybdenum or tungsten containing thin films" was invented by Tiina McKee (Espoo, Finland), Timo Hatanpaa (Espoo, Finland), Mikko Ritala (Espoo, Finland) and Markku Leskela (Espoo, Finland).
According to the abstract* released by the U.S. Patent & Trademark Office: "Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W."
The patent was file...