ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,395, issued on Jan. 20, was assigned to ASAHI KASEI K.K. (Tokyo) and National University Corporation Tokai National Higher Education and Research System (Nagoya, Japan).

"Laser diode" was invented by Ziyi Zhang (Tokyo), Maki Kushimoto (Nagoya, Japan) and Hiroshi Amano (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A laser diode (1) includes an AlN single crystal substrate (11), an n-type cladding layer (12) formed on the substrate and including a nitride semiconductor layer having n-type conductivity, a light-emitting layer (14) formed on the n-type cladding layer and including one or more quantum wells, a p-type cladding layer (20) f...