US Patent Issued to Applied Materials on Oct. 28 for "Regeneration anneal of metal oxide thin-film transistors" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,772, issued on Oct. 28, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Regeneration anneal of metal oxide thin-film transistors" was invented by Dejiu Fan (Santa Clara, Calif.), Yun-chu Tsai (San Jose, Calif.) and Dong Kil Yim (Pleasanton, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a TFT is provided including forming a buffer layer over a substrate. A metal oxide channel layer is formed over the buffer layer and the channel layer is annealed. A gate insulator layer is formed over the channel layer and an ILD is deposited over the gate insulator layer to form the TFT. The TFT is annealed for a first anne...