INTERNATIONAL PATENT: YANGTZE DELTA REGION INSTITUTE OF UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, HUZHOU, 电子科技大学长三角研究院（湖州） FILES APPLICATION FOR "FERROELECTRIC THIN-FILM CAPACITOR FOR FERROELECTRIC MEMORY AND MANUFACTURING METHOD"

GENEVA, April 27 -- YANGTZE DELTA REGION INSTITUTE OF UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, HUZHOU (Building B1, Science And Technology Innovation Complex, No. 819 Xisaishan RoadHuzhou, Zhejiang 313000), 电子科技大学长三角研究院（湖州） (中国浙江省湖州市西塞山路819号科技创新综合体B1幢) filed a patent application (PCT/CN2023/129006) for "FERROELECTRIC THIN-FILM CAPACITOR FOR FERROELECTRIC MEMORY, AND MANUFACTURING METHOD" on Nov 01, 2023. With publication no. WO/2025/081551, the details related to the pa...