INTERNATIONAL PATENT: YANGTZE DELTA REGION INSTITUTE OF UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, HUZHOU, 电子科技大学长三角研究院（湖州） FILES APPLICATION FOR "EFFICIENT GROWTH METHOD FOR MO LAYER-INDUCED ALN FILM AND PERFORMANCE TEST METHOD THEREFOR"

GENEVA, June 1 -- YANGTZE DELTA REGION INSTITUTE OF UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, HUZHOU (Building B1, Science and Technology Innovation Complex, No. 819 Xisaishan RoadHuzhou, Zhejiang 313000), 电子科技大学长三角研究院（湖州） (中国浙江省湖州市西塞山路819号科技创新综合体B1幢) filed a patent application (PCT/CN2023/135796) for "EFFICIENT GROWTH METHOD FOR MO LAYER-INDUCED ALN FILM, AND PERFORMANCE TEST METHOD THEREFOR" on Dec 01, 2023. With publication no. WO/2025/107353, the details related to t...