INTERNATIONAL PATENT: XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD., 西安奕斯伟材料科技股份有限公司, XI'AN XINSEMI MATERIAL TECHNOLOGY CO., LTD., 西安欣芯材料科技有限公司 FILES APPLICATION FOR "BASE, DEVICE AND METHOD FOR EPITAXIAL GROWTH OF SILICON WAFER AND EPITAXIAL SILICON WAFER"

GENEVA, Nov. 2 -- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD. (Room 1-3-029, No.1888 South Xifeng Rd., Hi-Tech ZoneXi'an, Shaanxi 710100), 西安奕斯伟材料科技股份有限公司 (中国陕西省西安市高新区西沣南路1888号1-3-029室), XI'AN XINSEMI MATERIAL TECHNOLOGY CO., LTD. (Room 1-1-046, 1 Block, No.1888 South Xifeng Rd, Hi-Tech ZoneXi'an, Shaanxi 710114), 西安欣芯材料科技有限公司 (中国陕西省西安市高新区西沣南&#...