INTERNATIONAL PATENT: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, 电子科技大学, CSMC TECHNOLOGIES FAB2 CO., LTD., 无锡华润上华科技有限公司 FILES APPLICATION FOR "LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR"

Posted On: 2025-07-07

GENEVA, July 7 -- UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (No. 2006, Xiyuan Avenue, High Tech Zone (West District),Chengdu, Sichuan 611731), 电子科技大学 (中国四川省成都市高新区（西区）西源大道2006号), CSMC TECHNOLOGIES FAB2 CO., LTD. (No.8 Xinzhou Road, Wuxi New District,Wuxi, Jiangsu 214028), 无锡华润上华科技有限公司 (中国江苏省无锡市新区新洲路8号) filed a patent application (PCT/CN2024/115845) for "LATERALLY DIFFUS...

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INTERNATIONAL PATENT: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, 电子科技大学, CSMC TECHNOLOGIES FAB2 CO., LTD., 无锡华润上华科技有限公司 FILES APPLICATION FOR "LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR"