GENEVA, Nov. 24 -- TOYO ALUMINIUM KABUSHIKI KAISHA (6-8, Kyutaro-machi 3-chome, Chuo-ku, Osaka-shi, Osaka5410056), 東洋アルミニウム株式会社 (大阪府大阪市中央区久太郎町三丁目6番8号) filed a patent application (PCT/JP2025/016559) for "METHOD FOR FORMING n-TYPE SILICON GERMANIUM LAYER" on May 01, 2025. With publication no. WO/2025/239235, the details related to the patent application was published on Nov 20, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Inte...