INTERNATIONAL PATENT: TOSOH CORPORATION, 東ソー株式会社 FILES APPLICATION FOR "GALLIUM NITRIDE SPUTTERING TARGET, GALLIUM NITRIDE FILM, METHOD FOR PRODUCING GALLIUM NITRIDE FILM, LAYERED SUBSTRATE, SEMICONDUCTOR ELEMENT AND ELECTRONIC EQUIPMENT"

GENEVA, Sept. 16 -- TOSOH CORPORATION (4560, Kaisei-cho, Shunan-shi, Yamaguchi7468501), 東ソー株式会社 (山口県周南市開成町４５６０番地) filed a patent application (PCT/JP2025/007227) for "GALLIUM NITRIDE SPUTTERING TARGET, GALLIUM NITRIDE FILM, METHOD FOR PRODUCING GALLIUM NITRIDE FILM, LAYERED SUBSTRATE, SEMICONDUCTOR ELEMENT, AND ELECTRONIC EQUIPMENT" on Feb 28, 2025. With publication no. WO/2025/187567, the details related to the patent application was published on Sep 11, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the ...