INTERNATIONAL PATENT: SICC CO., LTD., 山东天岳先进科技股份有限公司 FILES APPLICATION FOR "SILICON CARBIDE SUBSTRATE HAVING REGULAR CRYSTALLINE PHASE STRUCTURE"

GENEVA, Jan. 26 -- SICC CO., LTD. (No.99 South Tianyue Road, Huaiyin DistrictJinan, Shandong 250118), 山东天岳先进科技股份有限公司 (中国山东省济南市槐荫区天岳南路99号) filed a patent application (PCT/CN2023/143067) for "SILICON CARBIDE SUBSTRATE HAVING REGULAR CRYSTALLINE PHASE STRUCTURE" on Dec 29, 2023. With publication no. WO/2025/015863, the details related to the patent application was published on Jan 23, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual...