INTERNATIONAL PATENT: SICC CO., LTD., 山东天岳先进科技股份有限公司 FILES APPLICATION FOR "N-TYPE SILICON CARBIDE SINGLE CRYSTAL, N-TYPE SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE"

GENEVA, Nov. 9 -- SICC CO., LTD. (No. 99, Tianyue South Road, Huaiyin DistrictJinan, Shandong 250118), 山东天岳先进科技股份有限公司 (中国山东省济南市槐荫区天岳南路99号) filed a patent application (PCT/CN2024/124720) for "N-TYPE SILICON CARBIDE SINGLE CRYSTAL, N-TYPE SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE" on Oct 14, 2024. With publication no. WO/2025/227621, the details related to the patent application was published on Nov 06, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is man...