INTERNATIONAL PATENT: SICC CO., LTD., 山东天岳先进科技股份有限公司 FILES APPLICATION FOR "3C-SIC EPITAXIAL WAFER HAVING HIGH CRYSTAL QUALITY AND HIGH UNIFORMITY"

GENEVA, July 7 -- SICC CO., LTD. (No. 99, Tianyue South Road, Huaiyin DistrictJinan, Shandong 250118), 山东天岳先进科技股份有限公司 (中国山东省济南市槐荫区天岳南路99号) filed a patent application (PCT/CN2024/088264) for "3C-SIC EPITAXIAL WAFER HAVING HIGH CRYSTAL QUALITY AND HIGH UNIFORMITY" on Apr 17, 2024. With publication no. WO/2025/138497, the details related to the patent application was published on Jul 03, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellect...