GENEVA, Aug. 18 -- SHIN-ETSU HANDOTAI CO., LTD. (2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo1000004), 信越半導体株式会社 (東京都千代田区大手町二丁目２番１号) filed a patent application (PCT/JP2025/001240) for "SILICON SUBSTRATE AND HEAT TREATMENT METHOD FOR SILICON SUBSTRATE" on Jan 17, 2025. With publication no. WO/2025/169680, the details related to the patent application was published on Aug 14, 2025.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Invento...