GENEVA, Oct. 27 -- SHIN-ETSU HANDOTAI CO., LTD. (2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo1000004), 信越半導体株式会社 (東京都千代田区大手町二丁目２番１号) filed a patent application (PCT/JP2025/011481) for "PRODUCTION METHOD FOR SiGe SUBSTRATE" on Mar 24, 2025. With publication no. WO/2025/220436, the details related to the patent application was published on Oct 23, 2025.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Inventor(s): OHTSUKI Tsuyoshi (c/o S...