GENEVA, Nov. 3 -- SHIN-ETSU HANDOTAI CO., LTD. (2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo1000004), 信越半導体株式会社 (東京都千代田区大手町二丁目２番１号) filed a patent application (PCT/JP2025/013325) for "METHOD FOR PRODUCING SIGE SUBSTRATE AND SIGE SUBSTRATE" on Apr 01, 2025. With publication no. WO/2025/225297, the details related to the patent application was published on Oct 30, 2025.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Inventor(s): OHTSUK...