GENEVA, July 29 -- SHIN-ETSU HANDOTAI CO., LTD. (2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo1000004), 信越半導体株式会社 (東京都千代田区大手町二丁目２番１号) filed a patent application (PCT/JP2024/046058) for "METHOD FOR DETERMINING DEFECT REGION OF SILICON SINGLE-CRYSTAL SUBSTRATE" on Dec 26, 2024. With publication no. WO/2025/154521, the details related to the patent application was published on Jul 24, 2025.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
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