INTERNATIONAL PATENT: SHIN-ETSU HANDOTAI CO., LTD., 信越半導体株式会社 FILES APPLICATION FOR "GE-CONTAINING SUBSTRATE AND METHOD FOR MANUFACTURING GE-CONTAINING SUBSTRATE"

GENEVA, Nov. 3 -- SHIN-ETSU HANDOTAI CO., LTD. (2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo1000004), 信越半導体株式会社 (東京都千代田区大手町二丁目２番１号) filed a patent application (PCT/JP2025/013571) for "Ge-CONTAINING SUBSTRATE, AND METHOD FOR MANUFACTURING Ge-CONTAINING SUBSTRATE" on Apr 03, 2025. With publication no. WO/2025/225316, the details related to the patent application was published on Oct 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO...