INTERNATIONAL PATENT: SHENZHEN INSTITUTE OF ADVANCED ELECTRONIC MATERIALS, 深圳先进电子材料国际创新研究院 FILES APPLICATION FOR "NEGATIVE PHOTOSENSITIVE POLYIMIDE PRECURSOR AND COMPOSITION THEREOF"

GENEVA, Oct. 25 -- SHENZHEN INSTITUTE OF ADVANCED ELECTRONIC MATERIALS (Longwangmiao Industrial Zone, Fuyong Street, Bao'an DistrictShenzhen, Guangdong 518103), 深圳先进电子材料国际创新研究院 (中国广东省深圳市宝安区福永街道龙王庙工业区) filed a patent application (PCT/CN2024/088382) for "NEGATIVE PHOTOSENSITIVE POLYIMIDE PRECURSOR AND COMPOSITION THEREOF" on Apr 17, 2024. With publication no. WO/2025/217841, the details related to the patent application was published on Oct 23, 2025.

Notably, the patent application was submitte...