INTERNATIONAL PATENT: RESONAC CORPORATION, 株式会社レゾナック FILES APPLICATION FOR "SIC EPITAXIAL WAFER, METHOD FOR EVALUATING SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC DEVICE"

GENEVA, Nov. 4 -- RESONAC CORPORATION (9-1, Higashi-Shimbashi 1-chome, Minato-ku, Tokyo1057325), 株式会社レゾナック (東京都港区東新橋一丁目９番１号) filed a patent application (PCT/JP2025/016053) for "SiC EPITAXIAL WAFER, METHOD FOR EVALUATING SiC EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING SiC DEVICE" on Apr 25, 2025. With publication no. WO/2025/225726, the details related to the patent application was published on Oct 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organizati...