INTERNATIONAL PATENT: PN JUNCTION SEMICONDUCTOR (ZHEJIANG) CO., LTD., 派恩杰半导体（浙江）有限公司 FILES APPLICATION FOR "MULTI-FACE-GATE SILICON CARBIDE MOSFET AND PREPARATION METHOD THEREFOR AND CHIP"

GENEVA, June 22 -- PN JUNCTION SEMICONDUCTOR (ZHEJIANG) CO., LTD. (Room A160, Building 1, No.316, Binhai 4th Road, Qianwan New DistrictNingbo, Zhejiang 310007), 派恩杰半导体（浙江）有限公司 (中国浙江省宁波市前湾新区滨海四路316号1号楼A160) filed a patent application (PCT/CN2024/112951) for "MULTI-FACE-GATE SILICON CARBIDE MOSFET AND PREPARATION METHOD THEREFOR, AND CHIP" on Aug 19, 2024. With publication no. WO/2025/123742, the details related to the patent application was published on Jun 19, 2025.

Notably, the patent application was submitted u...