INTERNATIONAL PATENT: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, 国立研究開発法人産業技術総合研究所 FILES APPLICATION FOR "NITRIDE MATERIAL AND DIODE AND TRANSISTOR USING SAME"

GENEVA, Sept. 17 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1, Kasumigaseki 1-chome, Chiyoda-Ku Tokyo1008921), 国立研究開発法人産業技術総合研究所 (東京都千代田区霞が関１丁目３番１号) filed a patent application (PCT/JP2025/007571) for "NITRIDE MATERIAL, AND DIODE AND TRANSISTOR USING SAME" on Mar 03, 2025. With publication no. WO/2025/187656, the details related to the patent application was published on Sep 11, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC...