GENEVA, March 25 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo1008921), 国立研究開発法人産業技術総合研究所 (東京都千代田区霞が関１丁目３番１号) filed a patent application (PCT/JP2024/032832) for "MULTILAYERED GALLIUM NITRIDE STRUCTURE AND METHOD FOR PRODUCING MULTILAYERED GALLIUM NITRIDE STRUCTURE" on Sep 13, 2024. With publication no. WO/2025/058053, the details related to the patent application was published on Mar 20, 2025.
Notably, the patent application was submitted ...