INTERNATIONAL PATENT: NANJING THIRD GENERATION SEMICONDUCTOR TECHNOLOGY INNOVATION CENTER CO., LTD., 南京第三代半导体技术创新中心有限公司, CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 RESEARCH INSTITUTE, 中国电子科技集团公司第五十五研究所, NANJING THIRD GENERATION SEMICONDUCTOR TECHNOLOGY INNOVATION CENTER, 南京第三代半导体技术创新中心 FILES APPLICATION FOR "DOUBLE-TRENCH SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD"

GENEVA, May 4 -- NANJING THIRD GENERATION SEMICONDUCTOR TECHNOLOGY INNOVATION CENTER CO., LTD. ((Jiangning Development Zone) Room 8408 And 8409, Wireless Valley Complex Building, No. 9 Mozhou East Road, Jiangning DistrictNanjing, Jiangsu 211111), 南京第三代半导体技术创新中心有限公司 (中国江苏省南京市江宁区秣周东路9号无线谷综合楼8408、8409室（江宁开发区）), CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 RESEARCH INSTITUTE (No. 524, Zhongshan East ...