INTERNATIONAL PATENT: MITSUBISHI GAS CHEMICAL COMPANY, INC., 三菱瓦斯化学株式会社 FILES APPLICATION FOR "CLEANING SOLUTION FOR SIMULTANEOUSLY REMOVING PHOTORESIST RESIDUE AND ETCH STOP LAYER AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT ELEMENT USING SAME"

GENEVA, July 3 -- MITSUBISHI GAS CHEMICAL COMPANY, INC. (5-2, Marunouchi 2-chome, Chiyoda-ku, Tokyo1008324), 三菱瓦斯化学株式会社 (東京都千代田区丸の内二丁目５番２号) filed a patent application (PCT/JP2024/044885) for "CLEANING SOLUTION FOR SIMULTANEOUSLY REMOVING PHOTORESIST RESIDUE AND ETCH STOP LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT ELEMENT USING SAME" on Dec 19, 2024. With publication no. WO/2025/135091, the details related to the patent application was published on Jun 26, 2025.

Notably, the patent application was submitted under the International Patent Cl...