INTERNATIONAL PATENT: JAPAN SCIENCE AND TECHNOLOGY AGENCY, 国立研究開発法人科学技術振興機構 FILES APPLICATION FOR "FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT, ELECTRONIC DEVICE, METHOD FOR SWITCHING POLARITY OF FIELD EFFECT TRANSISTOR AND METHOD FOR CHANGING INTEGRATED CIRCUIT"

GENEVA, March 3 -- JAPAN SCIENCE AND TECHNOLOGY AGENCY (4-1-8, Honcho, Kawaguchi-shi, Saitama3320012), 国立研究開発法人科学技術振興機構 (埼玉県川口市本町四丁目１番８号) filed a patent application (PCT/JP2024/014065) for "FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT, ELECTRONIC DEVICE, METHOD FOR SWITCHING POLARITY OF FIELD EFFECT TRANSISTOR, AND METHOD FOR CHANGING INTEGRATED CIRCUIT" on Apr 05, 2024. With publication no. WO/2025/041378, the details related to the patent application was published on Feb 27, 2025.

Notably, the patent application was submitted...