GENEVA, Aug. 10 -- INNOSTAR SEMICONDUCTOR (SHANGHAI) CO., LTD. (Room 304, Building 13, No.1211 Hongyin Road, Lingang New AreaChina (Shanghai) Pilot Free Trade Zone Pudong New DistrictShanghai 201306), 昕原半导体（上海）有限公司 (中国上海市浦东新区中国（上海）自由贸易试验区临港新片区鸿音路1211号13幢304室) filed a patent application (PCT/CN2024/134226) for "RESISTIVE MEMORY ELEMENT AND PREPARATION METHOD THEREFOR" on Nov 25, 2024. With publication no. WO/2025/161638, the ...