GENEVA, Nov. 23 -- INNOSTAR SEMICONDUCTOR (SHANGHAI) CO., LTD. (Room 304, Building 13, No. 1211 Hongyin Road, Lingang New Area, China (Shanghai) Pilot Free Trade ZonePudong New District, Shanghai 201306), 昕原半导体（上海）有限公司 (中国上海市浦东新区中国（上海）自由贸易试验区临港新片区鸿音路1211号13幢304室) filed a patent application (PCT/CN2024/134755) for "METHOD FOR FORMING UPPER ELECTRODE CONNECTING HOLE, AND RELATED PRODUCT" on Nov 27, 2024. With publication no. W...