INTERNATIONAL PATENT: INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., 英诺赛科（苏州）半导体有限公司 FILES APPLICATION FOR "HIGH-TRANSIENT-IMMUNITY GALLIUM NITRIDE TRANSISTOR DIE AND TRANSISTOR CHIP"

GENEVA, May 4 -- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD. (98, Xinli Rd., FOHO Hi-Tech Zone, Wujiang DistrictSuzhou, Jiangsu 215211), 英诺赛科（苏州）半导体有限公司 (中国江苏省苏州市吴江区汾湖高新开发区新黎路98号) filed a patent application (PCT/CN2023/126339) for "HIGH-TRANSIENT-IMMUNITY GALLIUM NITRIDE TRANSISTOR DIE AND TRANSISTOR CHIP" on Oct 25, 2023. With publication no. WO/2025/086116, the details related to the patent application was published on May 01, 2025.

Notably, the patent application was submitted unde...