INTERNATIONAL PATENT: INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., 英诺赛科（苏州）半导体有限公司 FILES APPLICATION FOR "HIGH-SIDE DRIVING CIRCUIT, HIGH-SIDE DRIVING METHOD AND BATTERY MANAGEMENT SYSTEM"

GENEVA, Oct. 12 -- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD. (98 Xinli Rd., FOHO Hi-Tech Zone, Wujiang DistrictSuzhou, Jiangsu 215211), 英诺赛科（苏州）半导体有限公司 (中国江苏省苏州市吴江区汾湖高新开发区新黎路98号) filed a patent application (PCT/CN2025/073023) for "HIGH-SIDE DRIVING CIRCUIT, HIGH-SIDE DRIVING METHOD AND BATTERY MANAGEMENT SYSTEM" on Jan 17, 2025. With publication no. WO/2025/209000, the details related to the patent application was published on Oct 09, 2025.

Notably, the patent application was submit...