INTERNATIONAL PATENT: HUNAN SAN'AN SEMICONDUCTOR CO., LTD., 湖南三安半导体有限责任公司 FILES APPLICATION FOR "SILICON CARBIDE SEMICONDUCTOR EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR AND SILICON CARBIDE SEMICONDUCTOR DEVICE"

GENEVA, March 16 -- HUNAN SAN'AN SEMICONDUCTOR CO., LTD. (No. 399, Changxing Road, High Tech Development Zone ChangshaChangsha, Hunan 410000), 湖南三安半导体有限责任公司 (中国湖南省长沙市长沙高新开发区长兴路399号) filed a patent application (PCT/CN2023/130936) for "SILICON CARBIDE SEMICONDUCTOR EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR, AND SILICON CARBIDE SEMICONDUCTOR DEVICE" on Nov 10, 2023. With publication no. WO/2025/050504, the details related to the patent application was published on Mar 13, 2025.

Notably, the patent application was s...