GENEVA, Jan. 4 -- HPSTAR (BEIJING) (10 Dongbeiwang West Rd.,Haidian District, Beijing 100193), 北京高压科学研究中心 (中国北京市海淀区东北旺西路10号) filed a patent application (PCT/CN2025/116412) for "HIGH-PRESSURE DIAMOND INCLUSION AND PREPARATION METHOD THEREFOR" on Aug 22, 2025. With publication no. WO/2026/002305, the details related to the patent application was published on Jan 02, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ZENG, Qiaoshi (...