INTERNATIONAL PATENT: GUANGDONG GREATER BAY AREA INSTITUTE OF INTEGRATED CIRCUIT AND SYSTEM, 广东省大湾区集成电路与系统应用研究院 FILES APPLICATION FOR "GERMANIUM-SILICON MULTIPLE AVALANCHE LAYER-BASED GERMANIUM-ON-INSULATOR SPADS SENSOR STRUCTURE AND PREPARATION METHOD THEREFOR"

GENEVA, Dec. 7 -- GUANGDONG GREATER BAY AREA INSTITUTE OF INTEGRATED CIRCUIT AND SYSTEM (Building A, NO.136 Kaiyuan Avenue, Huangpu DistrictGuangzhou, Guangdong 510535), 广东省大湾区集成电路与系统应用研究院 (中国广东省广州市广州开发区开源大道136号A栋) filed a patent application (PCT/CN2024/108021) for "GERMANIUM-SILICON MULTIPLE AVALANCHE LAYER-BASED GERMANIUM-ON-INSULATOR SPADS SENSOR STRUCTURE AND PREPARATION METHOD THEREFOR" on Jul 28, 2024. With publication no. WO/2025/246006, the details related to the patent applicat...