INTERNATIONAL PATENT: FU DAN UNIVERSITY, 复旦大学, SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD., 上海集成电路制造创新中心有限公司 FILES APPLICATION FOR "HETEROJUNCTION SENSING-STORAGE-COMPUTING DEVICE AND MANUFACTURING METHOD THEREFOR"

Posted On: 2025-06-29

GENEVA, June 29 -- FU DAN UNIVERSITY (No. 220 Handan RoadYangpu District, Shanghai 200433), 复旦大学 (中国上海市杨浦区邯郸路220号), SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD. (No. 13, Lane 999, Dangui RoadPilot Free Trade ZonePudong New Area, Shanghai 201203), 上海集成电路制造创新中心有限公司 (中国上海市浦东新区自由贸易试验区丹桂路999弄13号) filed a patent application (PCT/CN2024/070509) for "HETEROJUN...

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INTERNATIONAL PATENT: FU DAN UNIVERSITY, 复旦大学, SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD., 上海集成电路制造创新中心有限公司 FILES APPLICATION FOR "HETEROJUNCTION SENSING-STORAGE-COMPUTING DEVICE AND MANUFACTURING METHOD THEREFOR"