INTERNATIONAL PATENT: DIODES INCORPORATED, 达尔科技股份有限公司 FILES APPLICATION FOR "TRENCHED SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR"

GENEVA, Nov. 2 -- DIODES INCORPORATED (4949 Hedgcoxe Road, Suite 200, PlanoTexas 75024), 达尔科技股份有限公司 (美国得克萨斯州皮亚诺海格克斯路4949号200室) filed a patent application (PCT/CN2024/093540) for "TRENCHED SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR" on May 16, 2024. With publication no. WO/2025/222566, the details related to the patent application was published on Oct 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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