INTERNATIONAL PATENT: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 RESEARCH INSTITUTE, 中国电子科技集团公司第五十五研究所 FILES APPLICATION FOR "MATERIAL PROCESSING METHOD FOR IMPROVING CHANNEL MOBILITY OF SILICON CARBIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR"

GENEVA, May 25 -- CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 RESEARCH INSTITUTE (No.524 Zhongshan East Road, QinhuaiNanjing, Jiangsu 210016), 中国电子科技集团公司第五十五研究所 (中国江苏省南京市秦淮区中山东路524号) filed a patent application (PCT/CN2024/108064) for "MATERIAL PROCESSING METHOD FOR IMPROVING CHANNEL MOBILITY OF SILICON CARBIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR" on Jul 29, 2024. With publication no. WO/2025/102821, the details related to the patent application was published on May 22, 2025.

Notably, the pa...