INTERNATIONAL PATENT: CENTRAL GLASS COMPANY, LIMITED, セントラル硝子株式会社 FILES APPLICATION FOR "SIC SINGLE CRYSTAL WAFER, SIC SINGLE CRYSTAL INGOT, METHOD FOR PRODUCING SIC SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING SIC SINGLE CRYSTAL INGOT, SIC SINGLE CRYSTAL INGOT PRODUCTION DEVICE AND METHOD FOR FORMING FILM FORMED BY SIC EPITAXIAL GROWTH"

GENEVA, Dec. 9 -- CENTRAL GLASS COMPANY, LIMITED (5253, Oaza Okiube, Ube-shi, Yamaguchi7550001), セントラル硝子株式会社 (山口県宇部市大字沖宇部５２５３番地) filed a patent application (PCT/JP2025/018874) for "SiC SINGLE CRYSTAL WAFER, SiC SINGLE CRYSTAL INGOT, METHOD FOR PRODUCING SiC SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING SiC SINGLE CRYSTAL INGOT, SiC SINGLE CRYSTAL INGOT PRODUCTION DEVICE, AND METHOD FOR FORMING FILM FORMED BY SiC EPITAXIAL GROWTH" on May 26, 2025. With publication no. WO/2025/249355, the details related to the patent application was published on Dec 04...