INTERNATIONAL PATENT: CANSEMI TECHNOLOGY INC., 粤芯半导体技术股份有限公司 FILES APPLICATION FOR "LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR"

GENEVA, Nov. 30 -- CANSEMI TECHNOLOGY INC. (No. 28, Fenghuang 5th Road, Huangpu DistrictGuangzhou, Guangdong 510000), 粤芯半导体技术股份有限公司 (中国广东省广州市黄埔区凤凰五路28号) filed a patent application (PCT/CN2024/136114) for "LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR" on Dec 02, 2024. With publication no. WO/2025/241474, the details related to the patent application was published on Nov 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by...