INTERNATIONAL PATENT: BEIJING ADVANCED MEMORY TECHNOLOGY CO., LTD, 北京时代全芯存储技术股份有限公司 FILES APPLICATION FOR "PHYSICAL VAPOR DEPOSITION METHOD FOR ELIMINATING ARCING DEFECTS"

GENEVA, Feb. 15 -- BEIJING ADVANCED MEMORY TECHNOLOGY CO., LTD (2D-802, Zhongguancun IC Park, 9 FenghaodongluHaidian District, Beijing 100094), 北京时代全芯存储技术股份有限公司 (中国北京市海淀区丰豪东路9号院中关村集成电路设计园2D座802) filed a patent application (PCT/CN2023/111861) for "PHYSICAL VAPOR DEPOSITION METHOD FOR ELIMINATING ARCING DEFECTS" on Aug 09, 2023. With publication no. WO/2025/030405, the details related to the patent application was published on Feb 13, 2025.

Notably, the patent...