INTERNATIONAL PATENT: BEIJING ADVANCED MEMORY TECHNOLOGY CO., LTD, 北京时代全芯存储技术股份有限公司, ADVANCE MEMORY TECHNOLOGY US, LLC, 美国时代全芯有限公司 FILES APPLICATION FOR "PHYSICAL FAILURE ANALYSIS METHOD FOR SEMICONDUCTOR TUNGSTEN WIRE CONTACT WINDOW"

Posted On: 2025-03-08

GENEVA, March 8 -- BEIJING ADVANCED MEMORY TECHNOLOGY CO., LTD (2D-802, Zhongguancun IC Park, 9 FenghaodongluHaidian District, Beijing 100094), 北京时代全芯存储技术股份有限公司 (中国北京市海淀区丰豪东路9号院中关村集成电路设计园2D座802), ADVANCE MEMORY TECHNOLOGY US, LLC (184 BENEFIELD BLVD. PEEKSKILLNew York 10566), 美国时代全芯有限公司 (美国纽约州184贝尼菲尔德大道,...

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INTERNATIONAL PATENT: BEIJING ADVANCED MEMORY TECHNOLOGY CO., LTD, 北京时代全芯存储技术股份有限公司, ADVANCE MEMORY TECHNOLOGY US, LLC, 美国时代全芯有限公司 FILES APPLICATION FOR "PHYSICAL FAILURE ANALYSIS METHOD FOR SEMICONDUCTOR TUNGSTEN WIRE CONTACT WINDOW"