Intellectual Property India Publishes Patent Application for 'Stacked Field Effect Transistor Cell With Hybrid Cross-Couple Contact' Filed by International Business Machines Corporation

MUMBAI, India, Feb. 21 -- Intellectual Property India has published a patent application (202527004731 A) filed by International Business Machines Corporation, New York, on Jan. 21, for 'stacked field effect transistor cell with hybrid cross-couple contact.'

Inventor(s) include Radens, Carl; Xie, Ruilong; Chu, Albert; and Anderson, Brent.

The application for the patent was published on Feb. 21, under issue no. 08/2025.

According to the abstract released by the Intellectual Property India: "Embodiments are disclosed for a complementary metal oxide semiconductor (CMOS) device. The CMOS device includes a hybrid cross-couple contact. The hybrid cross-couple contact includes a frontside contact to a gate of the CMOS device. The frontside cont...